For SiO and SiN homogeneous deposition, the equipment has good stability, high repeatability and good compatibility. It can be widely used in micro nano structure processing and related research of semiconductor materials and films.
The device supports a maximum of 6 inches. The uniformity of the deposited film is better than 2%, and the repeatability is better than 3%. The film has low stress, wet corrosion resistance and high film forming quality.