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ICP(Inductively Coupled Plasma)

The substrate material was etched through the reaction coupled plasma etching (ICP) method. The maximum support is 6 inches.

The device for etching Si is the Oxford PlasmaPro 100 Cobra.

The device model of InP, GaN, GaAs is etched as Samco rie-200ip.


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The service is introduced:

The substrate material was etched through the reaction coupled plasma etching (ICP) method. The maximum support is 6 inches.

The device for etching Si is the Oxford PlasmaPro 100 Cobra.

The device model of InP, GaN, GaAs is etched as Samco rie-200ip.


The service content:

1. Reaction coupled plasma etching base.

2. Optical detection


Service description:

Customer needs to provide: substrate. Provide mask graphics information (photoresist/media/metal etc.). Etching process parameters are required for special material etching.

Experimental period: 1-2 working days.

Fee standard: xx yuan/piece; Special pieces will be negotiated separately.


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