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Plasma Enhanced Chemical Vapor Deposition

By means of chemical vapor deposition (PECVD), the film is deposited in the substrate. Mainly SiO and SiN film.

The device model is Oxford PlasmaPro 100 PECVD, and the maximum support is 6 inches. The deposition temperature is 300 degrees.


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The service is introduced:

By means of chemical vapor deposition (PECVD), the film is deposited in the substrate. Mainly SiO and SiN film.

The device model is Oxford PlasmaPro 100 PECVD, and the maximum support is 6 inches. The deposition temperature is 300 degrees.


The service content:

1. Substrate cleaning (depending on the case)

2. PECVD deposition film.

3. Optical detection


Service description:

Customer needs to provide: substrate. Confirm the temperature range of the substrate.

Experimental period: 1-2 working days.

Fee standard: xx yuan/piece; Special pieces will be negotiated separately.


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